Thermodynamics of intrinsic point defects in non-stoichiometric lead telluride

 

Chem. Met. Alloys 5 (2012) 1-7

 

Dmytro FREIK, Igor GORITCHOK, Yuriy LYSYUK, Myroslava SHEVCHUK

 

Based on a crystal chemical model for defect subsystems, the equilibrium concentrations of point defects and free charge carriers in PdTe crystals submitted to two-temperature annealing have been calculated as a function of temperature T and tellurium vapor pressure PТе. The technological conditions leading to the formation of materials with n- or p-type conductivity have been determined.

 

Залежність концентрації електронів n, дірок p, холлівської концентрації Nx і точкових дефектів [D]

 

Keywords

Lead telluride / Two-temperature annealing / Electrical properties / Point defects