Electrical transport properties and electronic structure of RNiSn compounds (R=Y, Gd, Tb, Dy, and Lu)

 

Chem. Met. Alloys 1 (2008) 298-302

 

V.V. ROMAKA, E.K. HLIL, L. ROMAKA, D. FRUCHART, A. HORYN

 

A series of RNiSn compounds, where R = Y, Gd, Tb, Dy, and Lu, with the TiNiSi structure type (space group Pnma) was synthesized and the electrical transport properties were investigated by means of electrical resistivity and Seebeck coefficient measurements in the temperature range 80-380 K. All of the investigated compounds exhibit metallic-like conductivity. Electronic structure calculations based on the Full Potential Linearized Augmented Plane Wave (FLAPW) method were carried out to obtain the density of states (DOS) for the investigated compounds, from which the electrical properties were explained.

 

DOS of the majority spin and the minority spin in LuNiSn from FLAPW calculations.

 

Keywords

Intermetallics / Crystal structure / Electrical properties / Electronic structure calculations