Scanning tunneling spectroscopy of In4Se3 layered semiconductor crystals
Chem. Met. Alloys 4 (2011) 1-5
P.V. GALIY, T.M. NENCHUK, O.R. DVERIY, A. CISZEWSKI, P. MAZUR, S. ZUBER, Ya.M. BUZHUK
The topography and local density of states of the cleavage surfaces of a layered semiconductor In4Se3 (100) crystal were analyzed by scanning tunneling microscopy (STM) in situ. The shape and dimensions of the acquired STM profiles correspond well to the bulk lattice parameters. The local density of states and band gap for In4Se3 (100) were obtained by scanning tunneling spectroscopy (STS), which gave the same gap value as for the bulk crystal. The STM/STS results show a local energetic and phase inhomogeneity of In4Se3 (100) cleavage surfaces on the atomic scale. The studies confirm that the furrowed and chainlike surface structure of In4Se3 (100) is stable and unreconstructed under the cleavage and might be suitable as an anisotropic, low-conductive matrix/template for fabrication of surface-conductive nanowires or nanostructures.
Typical averaged normalized STS spectrum of n-type In4Se3 (100) UHV cleavage surface, acquired from 50x50 nm2 area. The conduction and valence band edges are indicated by lines, and the ticmark at +0.3 V indicates a feature in the bandgap region that arises from localized states.
Scanning tunneling spectroscopy / Scanning tunneling microscopy / Local density of states / Low-dimensional structures / Layered crystals / In4Se3