Hf3Ga1.97(2)Sn1.03(2), a ternary derivative of the ThIn type

 

Chem. Met. Alloys 4 (2011) 166-174

 

Iryna VOZNYAK, Yaroslav TOKAYCHUK, Viktor HLUKHYY, Thomas F. FÄSSLER, Roman GLADYSHEVSKII

 

The crystal structure of the substitutional solid solution HfGa1-xSnx (x = 0-0.34(1)) was refined from X-ray single-crystal and powder diffraction data (space group Pbcm, Pearson symbol oP24, a = 9.3370(19), b = 8.6920(17), c = 5.6650(11) Å for Hf3Ga1.97(2)Sn1.03(2)). The structure of the ideal limiting formula Hf3Ga2Sn, ignoring partial Ga/Sn disorder, represents the first ternary ordering derivative of the structure type ThIn. The structure of Hf3Ga2Sn is closely related to that of Hf5GaSn3 (limiting composition of the interstitial solid solution Hf5GaxSn3 (x = 0-1), structure type Hf5CuSn3, space group P63/mcm) and can be derived from it applying group-subgroup relations between the space groups.

 

 

 

Monoatomic layers in the structure of Hf5CuSn3.

 

Keywords

Hafnium / Gallium / Tin / Single-crystal X-ray diffraction / Crystal structure / Substitutional solid solution